http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20150036364-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-547 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2031-0344 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02167 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1868 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1804 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-032 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0216 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0256 |
| filingDate | 2013-07-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2015-04-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20150036364-A |
| titleOfInvention | Semiconductor substrate with passivation layer and method of manufacturing same |
| abstract | A method for fabricating a semiconductor device, comprising: forming a composition layer on a semiconductor substrate by applying a composition for forming a passivation layer containing a compound represented by the following general formula (I); and heat treating the composition layer at 300 ° C to 1000 ° C to form a passivation layer And forming a passivation layer on the semiconductor substrate. M (OR < 1 >) (m) (I) Wherein M comprises at least one metal element selected from the group consisting of Nb, Ta, V, Y and Hf, and each R 1 independently represents an alkyl group having 1 to 8 carbon atoms or an aryl group having 6 to 14 carbon atoms And m represents an integer of 1 to 5.] |
| priorityDate | 2012-07-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 411.