http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20150034093-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1222 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1255 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2014-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2015-04-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20150034093-A |
| titleOfInvention | Semiconductor device |
| abstract | The present invention forms an oxide semiconductor film having a low defect level density. Alternatively, one mode of the invention forms an oxide semiconductor film having a low impurity concentration. And improves electric characteristics in a semiconductor device or the like using an oxide semiconductor film. A metal oxide film containing a region where a diffraction pattern having a bright spot showing the orientation is observed in a range of 70% or more and less than 100% when the observation spot is changed in a one-dimensional range of 300 nm using a transmission electron diffraction measurement apparatus A resistance element, or a semiconductor device having a transistor. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20220066434-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10591791-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11530134-B2 |
| priorityDate | 2013-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 63.