http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20150033821-A
Outgoing Links
Predicate | Object |
---|---|
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32134 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-124 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-45 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-16 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-18 |
filingDate | 2013-09-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2015-04-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | KR-20150033821-A |
titleOfInvention | Etchant and fabrication method of metal wiring and thin film transistor substrate using the same |
abstract | The etchant composition according to one embodiment of the present invention comprises 0.5 to 20% by weight persulfate, 0.01 to 1% by weight fluorine compound, 1 to 10% by weight inorganic acid, From 0.01 to 2% by weight of an azole compound, from 0.1 to 5% by weight of a chlorine compound, from 0.05 to 3% by weight of a copper salt, from 0.01 to 5% by weight of an antioxidant, , And water so that the total weight of the total composition is 100 wt%. The etchant composition can be used to form a metal wiring by etching a metal film containing copper or to manufacture a thin film transistor substrate for a display device. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20180093806-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10465296-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11441071-B2 |
priorityDate | 2013-09-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 128.