http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20150033772-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78606 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78648 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1368 |
| filingDate | 2013-09-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2015-04-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20150033772-A |
| titleOfInvention | Thin film transistor and Display Device and Method of manufacturing the sames |
| abstract | A thin film transistor according to the present invention includes a bottom gate electrode formed on a substrate, a first gate insulating film formed on the bottom gate electrode, a first active layer formed on the first gate insulating film, An etch stopper layer for protecting the first active layer, a second active layer including the etch stopper layer and formed on the first active layer, a source electrode and a drain active region formed on the second active layer, A second gate insulating film formed on the source and drain electrodes and the second active layer, and a top gate electrode formed on the second gate insulating film, wherein the plasma gas generated during the formation of the protective film comprises It is possible to prevent penetration into the first active layer and to secure reliable device characteristics. |
| priorityDate | 2013-09-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.