| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_951ade9cb9f29eb8a29ddae1e2fc87e3 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02527
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02573 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate |
2013-09-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_380cf6f27a67ee2a047928d7945312b9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2a3fa93fa895255f9a913399f3ab51ab
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f8c0abc5099f623550a8c35cd4af0e29
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_065295ebb0bd4e22b496c8880ec63b7f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_73d3a54d76d12fb67c2ca16560b70d01
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a21a7081b9bfa0a0b1f71cf4b4f8ca33 |
| publicationDate |
2015-03-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20150027998-A |
| titleOfInvention |
Growing Method of Gallium Nitride Film |
| abstract |
A nitride thin film growth method is disclosed. The growth method includes: providing a substrate in a reaction chamber; injecting a gas including a carbon dopant source and a carbon-containing species composed of a material different from the carbon dopant source into the reaction chamber to form a carbon-doped nitride thin film on the substrate . |
| priorityDate |
2013-09-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |