| abstract |
The present invention provides a method of manufacturing a semiconductor device, comprising: at least one element selected from aluminum (Al), magnesium (Mg), and silicon (Si); And carbon nanotubes containing at least one metal selected from the group consisting of cobalt (Co), nickel (Ni), iron (Fe), manganese (Mn), and molybdenum (Mo) and having a bulk density of 0.15 to 0.4 g / And synthesizing a supported catalyst in a fluidized bed atomizer; And injecting carbon source gas after injecting the synthesized supported catalyst into a fluidized bed reactor to synthesize carbon nanotubes on the catalyst. |