| abstract |
Forming at least one unit element in the substrate and on the front surface, forming a through-via structure having vertically penetrating the substrate and spaced apart from the at least one unit element, and having a rear end portion including the concave portion, The through-via-via structure is formed on the front end of the through-via-hole structure, and at least one of the unit elements and the through-via-via structure is electrically connected to the front end of the through- Forming a rear surface bump on the rear surface of the substrate, forming a rear surface metal layer that is electrically connected to the rear surface of the through via-hole structure, and forming a rear surface bump electrically connected to the rear surface wiring layer, A semiconductor device manufacturing method is proposed. |