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filingDate 2015-01-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4
publicationDate 2015-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20150022943-A
titleOfInvention Semiconductor device
abstract The present invention imparts high field effect mobility to transistors using oxide semiconductors. Further, a highly reliable semiconductor device using the transistor is provided. Type impurity-containing oxide semiconductor layer, which functions as a current path (channel) of the transistor, and which has a conductivity higher than that of the oxide semiconductor layer, And this low-oxide semiconductor layer is included. In the oxide semiconductor layer functioning as the channel, the n-type impurity concentration on the gate insulating layer side is set to be higher than the impurity concentration on the back channel side. With this structure, the channel is made to be separated from the interface of the insulating layer in contact with the oxide semiconductor stack to form a buried channel.
priorityDate 2012-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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