| abstract |
An object of the present invention is to provide a method of manufacturing a thin film transistor which forms a transparent amorphous oxide semiconductor layer by a liquid phase method and exhibits high mobility by annealing at a relatively low temperature, and a thin film transistor manufactured by the method. (A) Ga (b) Zn (c) O (d) (where a > = 0 ) , a step of forming a gate electrode, a step of forming a gate insulating film in contact with the gate electrode, 0, b ≥ 0, c ≥ 0, a + b + c = 1, is represented by d> 0), b ≤ 1/3 , also the first area that satisfies b ≥ -10a / 7 + 1, and in ( e) Ga (f) Zn ( g) O (h) (e ≥ 0, f ≥ 0, g ≥ 0, e + f> 0, represented by h> 0), with respect to the gate electrode than the first region And a step of forming an oxide semiconductor layer having a second region located far away from the gate electrode and opposed to the gate electrode via the gate insulating film by a liquid phase method. |