| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-3185
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02334
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02343
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31133
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31058
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G73-0206
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02063
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-293
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02118
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02093
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D179-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02362 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate |
2013-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2015-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20150020668-A |
| titleOfInvention |
Semiconductor device and method for manufacturing same, and rinsing fluid |
| abstract |
In the present invention, a semiconductor substrate having an interlayer insulating layer having a concave portion and wiring including copper at least partially exposed on at least a part of a bottom surface of the concave portion is provided with a polymer having a cationic functional group and a weight average molecular weight of 2000 to 1000000 And a content of Na and K of 10 mass ppb or less on the element basis to form a seal layer on at least the bottom surface and the side surface of the concave portion; and a step of forming a seal layer on the side of the semiconductor substrate on which the seal layer is formed , And a step of performing heat treatment at a temperature of 200 占 폚 or higher and 425 占 폚 or lower to remove at least a part of the seal layer formed on the exposed surface of the wiring. |
| priorityDate |
2012-07-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |