| abstract |
More particularly, the present invention relates to a resist protective film material and a method for forming a pattern, and more particularly, to a resist protective film material and a pattern forming method using a resist protective film material comprising a repeating unit derived from styrene having a 1,1,1,3,3,3-hexafluoro-2-propanol group and acenaphthylene And a method of forming a pattern using the polymeric compound having a repeating unit derived from the polymeric compound as a base resin. By applying the resist protective film material of the present invention, anti-climax of the resist pattern due to amine contamination in the atmosphere can be prevented, and sensitivity of the resist film can be improved according to the effect of increasing or decreasing to the resist film. |