http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20150013772-A

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filingDate 2013-04-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2015-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20150013772-A
titleOfInvention Semiconductor constructions and methods of forming semiconductor constructions
abstract Some embodiments include semiconductor structures. The structure has an electrically conductive post extending through the semiconductor die. The post has a top surface on the back surface of the die and a side wall surface that extends between the back surface and the top surface. The photosensitive material is on the back surface and along the side wall surface. The electrically conductive material directly touches the upper surface of the post. The electrically conductive material is configured as a cap on the posts. The cap has an edge that extends laterally beyond the post and surrounds the post. The entire edge is directly above the photosensitive material. Some embodiments provide a method of forming a semiconductor structure having a photosensitive material proximate a wafer-penetrating interconnect, having an electrically conductive material cap directly on and directly on an upper surface of the interconnect and directly contacting an upper surface of the photosensitive material .
priorityDate 2012-05-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 45.