| abstract |
The present invention provides a semiconductor device having a structure capable of suppressing deterioration of electric characteristics remarkably caused by miniaturization. A first oxide semiconductor film on the insulating surface, a second oxide semiconductor film on the first oxide semiconductor film, a source electrode and a drain electrode which are in contact with the side surfaces of the first oxide semiconductor film and the second oxide semiconductor film, Drain electrode, a third oxide semiconductor film over the second oxide semiconductor film, a source electrode and a drain electrode, and a gate insulating film over the third oxide semiconductor film, And a gate electrode facing the upper surface and the side surface of the second oxide semiconductor film. |