http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20150012417-A
Outgoing Links
Predicate | Object |
---|---|
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-24 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-04 |
filingDate | 2013-07-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2015-02-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | KR-20150012417-A |
titleOfInvention | A light emitting device |
abstract | An embodiment of the present invention provides a semiconductor light emitting device including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer disposed on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, And an active layer having well layers and quantum barrier layers, wherein the thickness of the first quantum barrier layer closest to the first conductivity type semiconductor layer of the quantum barrier layers is the thickest. |
priorityDate | 2013-07-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.