http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20150012417-A

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filingDate 2013-07-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2015-02-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20150012417-A
titleOfInvention A light emitting device
abstract An embodiment of the present invention provides a semiconductor light emitting device including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer disposed on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, And an active layer having well layers and quantum barrier layers, wherein the thickness of the first quantum barrier layer closest to the first conductivity type semiconductor layer of the quantum barrier layers is the thickest.
priorityDate 2013-07-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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