http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20150011936-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78603 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1218 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2013-07-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2015-02-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20150011936-A |
| titleOfInvention | Substrate for Thin Film Transistor |
| abstract | The present invention relates to a substrate for a thin film transistor. More particularly, a barrier layer containing silicon oxide is formed in at least one side of a polyimide film, thereby obtaining superior warpage characteristic and thermal stability, and providing the thin film transistor substrate of a flexible electronic device having optical characteristic and moisture penetration rate. A roll-to-roll process can be performed on the thin film transistor substrate of a flexible electronic device, thereby being greatly advantageous to a large-sized and continuous process, improving productivity and reducing manufacturing costs. |
| priorityDate | 2013-07-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.