| abstract |
[PROBLEMS] To provide a composition for forming a lower EUV resist film having a good resist shape. (B) a hydrolyzable silane compound (b) having a sulfonamide structure, a carboxylic acid amide structure, a urea structure, or an isocyanuric acid structure; a polysiloxane (A) containing a hydrolyzed condensate of a hydrolyzable silane A resist underlayer film forming composition for EUV lithography. (B) comprising a hydrolyzable condensation product of a hydrolyzable silane (a) and a hydrolyzable silane compound (b) having a sulfonamide structure, a carboxylic acid amide structure, a urea structure or an isocyanuric acid structure, A resist underlayer film forming composition for EUV lithography. The polysiloxane (A) is a cohydrolysis condensate of tetraalkoxysilane, alkyltrialkoxysilane and aryltrialkoxysilane. |