| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8cf8d77ac0eff1767b22d2fb9445b64d |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45527
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45542
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45544
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-022
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45561
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-505
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-458
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67207
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02208 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate |
2014-07-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_239b8853f364c7883e21862878d099a7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1138e97cc4f8b4c32ce9343d9f2b4418
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_903893f13bb20805cdf6875ad720d0e9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3c0ce72054b166339619a618da7c073e |
| publicationDate |
2015-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20150008015-A |
| titleOfInvention |
Sequential precursor dosing in an ald multi-station/batch reactor |
| abstract |
A method for depositing layers of material on a plurality of semiconductor substrates in a plurality of processing stations in one or more reaction chambers is disclosed herein. The method includes supplying a precursor flowing from a common source to a first substrate at a first processing station and supplying the precursor to a second substrate at a second processing station, Wherein the second substrate is supplied to the first substrate during a first supply phase that is substantially not supplied to the second substrate and is supplied to the second substrate during a second supply phase that is not substantially supplied to the first substrate, . It is also contemplated to have a controller having machine-readable instructions for staggering the supply of first and second substrates to a plurality of processing stations and first and second processing stations contained in one or more reaction chambers An apparatus is disclosed herein. |
| priorityDate |
2013-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |