| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2a3bb4ae410da4be8184239adc5ab1c0 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32135 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02576
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 |
| filingDate |
2014-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_37c08e66451a32365b6963943e7ff2f9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eb0f340d419a6f79939796feff5afe30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bda93be146ba947043bca2a81ccad3a8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_48be90ace4e7edd9a1ff247a56a23dbd |
| publicationDate |
2015-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20150007951-A |
| titleOfInvention |
Doped semiconductor films and processing |
| abstract |
A method of forming a semiconductor material incorporating an electrical dopant is disclosed. In one aspect, a method of incorporating a dopant in a semiconductor film includes forming a first semiconductor material incorporating a dopant with a first dopant concentration and selectively etching a portion of the first semiconductor material, Leaves a first etched semiconductor material incorporating the dopant at a second dopant concentration that is higher than the first dopant concentration. |
| priorityDate |
2013-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |