| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_268be9afa00cf55b5aa72b1612151ecb |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K30-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-549
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-621 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K30-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-621
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-6572
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-633
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-636 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-146
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-48
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H04N5-369 |
| filingDate |
2013-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e370471fe2fd3629bf9535ae946722dd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c5f99a4f50adece6e1586fe8f5c24de5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d39e4c8eeeeb758ab2b6f08cdf054346 |
| publicationDate |
2015-01-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20150001833-A |
| titleOfInvention |
Photoelectric conversion element, image capture element, photoelectric conversion element fabrication method, and image capture element fabrication method |
| abstract |
A photoelectric conversion element capable of suppressing an increase in dark current, an image pickup element using the photoelectric conversion element, a method of manufacturing the photoelectric conversion element, and a method of manufacturing an image pickup element. A photoelectric conversion element comprising a lower electrode, an organic layer including a photoelectric conversion layer having a bulk hetero structure of an N-type organic semiconductor composed of a predetermined P-type organic semiconductor and fullerene, and an upper electrode stacked in this order on a substrate , The crystallinity of the fullerene is 1 to 5%, and the process of improving the PL intensity by 10% or more before the X-ray is irradiated on the photoelectric conversion layer at the time of manufacturing the photoelectric conversion element is solved. |
| priorityDate |
2012-05-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |