| abstract |
The present invention relates to an electro-optic (EO) crystal device, and its application and manufacturing method. More particularly, the present invention relates to an ultra high linear EO coefficient (? C ), such as a transversely effective linear EO coefficient greater than 1100 pm / V and a species effective up to 527 pm / V in a wide range of modulation, communication, denotes a linear EO coefficient, resulting in (doped or represents a half-wave voltage very low under a very low half-wave voltage (V l) and 87V lower than 200V (V T) of undoped PMN-PT, PIN-PMN-PT or PZN -PT ferroelectric crystal). ≪ / RTI > |