Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8cf8d77ac0eff1767b22d2fb9445b64d |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K3-241 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D7-123 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-413 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D21-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K3-241 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-416 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D21-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B41C1-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D21-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-26 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D21-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D21-00 |
filingDate |
2014-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ea7fa9476224819b36add3a8ef26558d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cafc7bca3f0e7a6f7d28e4f4b3e643a1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_508f5a0924ca8e82dd9da23903f0d017 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9ef0bfb838c9f3b1327d76ee22f743b9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_49076e4a2d39fadf349861bca7b405f3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_73d9fa96fae3d2d27bb64b7a8fb158bf |
publicationDate |
2014-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
KR-20140146015-A |
titleOfInvention |
Tsv bath evaluation using field versus feature contrast |
abstract |
Embodiments of the present disclosure are directed to methods and apparatus for determining whether a particular test set can successfully fill a feature on a substrate. In various instances, the substrate is a semiconductor substrate and the feature is TSV (penetrating silicon vias). In general, two experiments are used, the first experiment simulating the states present in the field region of the substrate during the filling process, and the second experiment simulating the states present in the features on the substrate during the filling process. The output from these experiments is used in various techniques to predict whether a particular set will produce a suitably filled feature. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20200059309-A |
priorityDate |
2013-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |