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publicationDate 2014-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20140146015-A
titleOfInvention Tsv bath evaluation using field versus feature contrast
abstract Embodiments of the present disclosure are directed to methods and apparatus for determining whether a particular test set can successfully fill a feature on a substrate. In various instances, the substrate is a semiconductor substrate and the feature is TSV (penetrating silicon vias). In general, two experiments are used, the first experiment simulating the states present in the field region of the substrate during the filling process, and the second experiment simulating the states present in the features on the substrate during the filling process. The output from these experiments is used in various techniques to predict whether a particular set will produce a suitably filled feature.
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