| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-772
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-4763
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate |
2013-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_80cb9aa215242037aaccafaea0cb55ab
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_686713ff398ffc6d38cee2470068fc6e |
| publicationDate |
2014-12-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20140143841-A |
| titleOfInvention |
Aspect ratio dependent deposition to improve gate spacer profile, fin-loss and hardmask-loss for finfet scheme |
| abstract |
The techniques disclosed herein include systems and methods for an aspect ratio dependent film deposition process that improves the gate spacer profile in FinFET or other transistor schemes and reduces pin loss and also reduces hard mask loss. This technique involves the deposition of an aspect ratio dependent protective layer to assist in profile adjustment of the structure during fabrication. Plasma and process gas parameters are adjusted so that a greater amount of polymer can be captured on the surface of the structure visible to the plasma. For example, the upper portion of the structure can capture a greater amount of polymer than the lower portion of the structure. The variable thickness of the protective layer allows selective portions of the spacer material to be removed while other portions are protected. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20210053169-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11127741-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9793381-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11062957-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10084051-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20190024517-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20170062618-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11133307-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11437491-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10515955-B1 |
| priorityDate |
2012-04-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |