| abstract |
A sputtering target and a high-resistance transparent film capable of forming a high-resistance transparent film by DC sputtering, and a method for manufacturing the same. Wherein the sputtering target is composed of an oxide sintered body containing zinc oxide as a main component and one or more elements selected from the group consisting of In, Ga, Al and B in an amount of 0.005 to 0.1 at% And the density of the oxide-sintered body is at least 5.3 g / cm < 3 >. The high resistance transparent film is formed by DC sputtering using the sputtering target and has a volume resistivity of 1 x 10 < 4 > OMEGA .cm or more. |