http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20140135814-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ed62b7551998e54b35784cdbbb2778d5 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4966 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28562 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-318 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45523 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45527 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28556 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-08 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34 |
| filingDate | 2011-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_929e876d3323bbc19bd50b8c58a31c6f |
| publicationDate | 2014-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20140135814-A |
| titleOfInvention | Method for manufacturing semiconductor device, method for processing substrate, and apparatus for processing substrate |
| abstract | A step of accommodating the substrate in the processing chamber; And a step of forming a metal nitride film on the substrate by supplying a source gas containing a metal element, a nitrogen-containing gas and a hydrogen-containing gas into the processing chamber, wherein in the step of forming the metal nitride film, Intermittently supplying the raw material gas and the nitrogen-containing gas into the processing chamber under the plasma, or intermittently alternately supplying the raw material gas and the nitrogen-containing gas into the processing chamber under the atmosphere of the non-plasma, Containing gas into the treatment chamber while the supply of the nitrogen-containing gas into the treatment chamber under the atmosphere is continued, and at least the supply of the nitrogen-containing gas into the treatment chamber under the atmosphere of the non- And the water Containing gas is supplied. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20200113100-A |
| priorityDate | 2010-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 80.