| abstract |
In the plasma processing apparatus 100, an electromagnetic field is formed in the rectangular waveguide 22 by the microwave introduced into the rectangular waveguide 22 from the microwave generating device 21, The processing gas containing the gas is converted into plasma in the slot hole 41 of the antenna unit 40. A plasma having a high hydrogen radical density is radiated from the inside of the antenna section 40 of the rectangular waveguide 22 having a relatively high pressure to the external base material S through the slot hole 41, The organic material of the precursor-containing film is decomposed and removed, and the metal fine particles are agglomerated or metal ions derived from the metal compound are reduced to form a conductive film. |