| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2a3bb4ae410da4be8184239adc5ab1c0 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0007
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2213-71 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-023
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-823
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-245
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8833
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-84
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-845
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-041
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-011 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate |
2014-04-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_40df519406a4790c8808e930732e011d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_07f6ed8ccc9497566c5c1fdb0c168556
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d9f205e17c00f950ba36f7eb81671c1a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_66471eceaf3ad9491dbd81535257b6a6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d34de2ca6ba93d2956b1cf7c472b2859 |
| publicationDate |
2014-11-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20140128877-A |
| titleOfInvention |
Method of making a resistive random access memory device with metal-doped resistive switching layer |
| abstract |
A method of forming a resistive random access memory (RRAM) device is disclosed. The method includes forming a first electrode, forming a resistive switching oxide layer comprising a metal oxide by thermal atomic layer deposition (ALD), doping a resistive switching oxide with a metal dopant other than the metal forming the metal oxide And forming a second electrode by thermal atomic layer deposition (ALD), wherein a resistive switching layer is interposed between the first electrode and the second electrode. In some embodiments, the step of forming a resistive switching oxide may be performed without exposing the surface of the switching oxide layer to a surface-depletion plasma process after depositing the metal oxide. |
| priorityDate |
2013-04-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |