| abstract |
The resistance of the conductive path is lowered when copper is embedded in the recess for embedding formed in the interlayer insulating film made of the SiCOH film to form the conductive path. When a concave portion is formed in the SiCOH film 1 by plasma, C is released from the film to form a damaged layer. If this is removed by hydrofluoric acid or the like, the surface becomes hydrophobic. B, Si, or Al is adsorbed on the SiCOH film 1 by supplying a gas containing a boron compound gas, a silicon compound gas, or trimethyl aluminum to the SiCOH film 1. Since these atoms bind to Ru, formation of the Ru film 4 on the SiCOH film is facilitated. Thereafter, the Ru film 4 is formed by CVD using, for example, Ru 3 (CO) 12 gas and CO gas, then the copper 5 is buried, and the CMP process is performed, Thereby forming a wiring structure. |