abstract |
A small-sized, light-emitting device having sufficient strength and high mass productivity is provided. The light emitting device of the present invention includes: a semiconductor chip including a p-type semiconductor layer and an n-type semiconductor layer, the semiconductor chip emitting light between the p-type semiconductor layer and the n-type semiconductor layer; A p-side pad electrode disposed on the semiconductor layer; an n-side pad electrode disposed on the n-type semiconductor layer on an upper surface side of the semiconductor chip; a resin layer disposed to cover an upper surface of the semiconductor chip; Side connection electrode and the n-side connection electrode, which are located on the upper surface side of the semiconductor chip, and are provided between the p-side pad electrode and the p-side connection electrode and between the n-side pad electrode and the n- And at least one of the connection electrodes is connected by a metal wire arranged in the resin. |