http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20140123431-A

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filingDate 2014-04-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4
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publicationDate 2014-10-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20140123431-A
titleOfInvention Semiconductor device
abstract The present invention provides a semiconductor device having a constitution capable of suppressing deterioration of electric characteristics that becomes remarkable with miniaturization. A second oxide semiconductor layer formed on the first oxide semiconductor layer and having a smaller area than the first oxide semiconductor layer and entirely overlapping the first oxide semiconductor layer; A source electrode layer and a drain electrode layer in which a part of the first oxide semiconductor layer and a part of the second oxide semiconductor layer are in contact with each other and a source electrode layer and a drain electrode layer which are formed on the first oxide semiconductor layer and the second oxide semiconductor layer, A gate insulating film formed on the third oxide semiconductor layer, and a gate electrode layer formed on the gate insulating film.
priorityDate 2013-04-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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