| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0332
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32137
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0338 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 |
| filingDate |
2013-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f81acb5f6af7a4922b7b850082d940eb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7535312ace812d59831a879fcfec0323
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7a0ebc90a47fac88ecdbe610b0cd34c5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5a0a335c982b4ff9dc6bf07a8a25ae62
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9efeda7485f798599d1c0699c6b796bd |
| publicationDate |
2014-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20140115353-A |
| titleOfInvention |
Conformal amorphous carbon for spacer and spacer protection applications |
| abstract |
There is provided a method of forming a nitrogen-doped amorphous carbon layer on a substrate in a processing chamber. The method generally includes depositing a sacrificial dielectric layer of predetermined thickness over a substrate; Forming patterned features on the substrate by removing portions of the sacrificial dielectric layer to expose an upper surface of the substrate; Depositing conformally a nitrogen-doped amorphous carbon layer of a predetermined thickness on the exposed upper surface of the substrate and the patterned features; Doped amorphous carbon layer from the top surface of the substrate and the top surface of the patterned features using an anisotropic etch process to provide patterned features that are filled in the sidewall spacers formed from the nitrogen-doped amorphous carbon layer Selectively removing; And removing the patterned features from the substrate. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20200023509-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20190140188-A |
| priorityDate |
2012-01-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |