| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a188d15e53f61fc61b985decfe6ec8cc |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01M10-052
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E60-10 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01M4-0404
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01M4-0492
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-1651
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01M4-386
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-1639
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01M4-366
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01M4-1395
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-1601
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00539
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01M4-134
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-38 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C18-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C18-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C28-02 |
| filingDate |
2012-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a120b843ea2a6913dc2d6222ef57e376
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_629c74f3e578c1b503ac2ea30148c6a2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2e168de23c9780605f774461ee907f49 |
| publicationDate |
2014-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20140113929-A |
| titleOfInvention |
Etched Silicon Structures, Method of Forming Etched Silicon Structures and Uses Thereof |
| abstract |
As a method for etching silicon, Depositing a first metal on the silicon surface to be etched by electroless deposition, wherein the electrolessly deposited first metal partially covers the surface of the silicon to be etched; Depositing a second metal different from the first metal over the silicon surface and the electrolessly deposited first metal, wherein the film of the deposited second metal covers the silicon surface to be etched; Removing the first metal and the second metal from a region of the deposited film of the second metal that overlaps the first metal and partially covers the silicon surface on which the second metal is to be etched; Also Etching the silicon by exposing the silicon surface to an aqueous etching composition comprising an oxidant and a source of fluorine ions. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20200079929-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101671627-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20180096856-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2016178452-A1 |
| priorityDate |
2011-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |