| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_64392538477fd66cf2a9442e2380021f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c02e6335f9bfca9618f62df9c06547ef
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_675a098f5ef49b8adb57fb603b787761 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-549 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K30-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-035218
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-072
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-109 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-109 |
| filingDate |
2013-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2a90ed4f171788f9766411333fb240a6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_25d30ca123e84220a179ae42914c71a5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f45caaeaf4dc4a9e2ba21870c6a76474 |
| publicationDate |
2014-09-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20140113144-A |
| titleOfInvention |
Quantum dot organic bulk heterojunction photodetector of nano structure |
| abstract |
The present invention relates to a nanostructured quantum dot organic bulk heterojunction photodetector, and more particularly, to a nanostructured quantum dot organic bulk heterojunction photodetector which comprises an electron transporting material, a first light absorbing material, an electron donating material comprising a conductive organic material, And a second light absorber in the form of a heterojunction bulk of the electron-transporting material and the hole-injecting material. The nanostructured quantum dot organic bulk heterojunction light-receiving device according to the present invention minimizes disadvantages of existing silicon and compound semiconductors, absorbs light of a broad wavelength band, exhibits high sensitivity and high efficiency, And can be mass-produced under relaxed process conditions. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102275209-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10001667-B2 |
| priorityDate |
2013-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |