| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-40114
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31055
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76229
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823481 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 |
| filingDate |
2014-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5793f8832039d258019a0f8c2e1b5903
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3bac230afdfcdf28305f1768921080c8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_01ea8608906cd288f9d0ae3578c632cf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_50273142e660607300702967f4a4b447
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bb7261c9435bae2c90a24bbde01ea5a0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8caa9ce4de8ef26b2462da61c1045341
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8d805e68cc094ce6b1ab14b5d8f2eb1f |
| publicationDate |
2014-09-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20140111628-A |
| titleOfInvention |
Semiconductor device and method for forming the same |
| abstract |
A semiconductor device includes a substrate and a gate structure formed on the substrate. The semiconductor device also includes an insulator feature formed in the substrate. The insulator feature includes an insulator layer and a capping layer over the insulator layer. |
| priorityDate |
2013-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |