| abstract |
A method of forming an interconnect structure includes forming a metal line of a first conductive material on a substrate, depositing a dielectric layer on the metal line, patterning the dielectric layer to form an opening, Depositing a first barrier layer on the bottom and sidewalls of the opening using a first barrier layer, forming a second barrier layer on the first barrier layer, wherein the first barrier layer is coupled to ground, 2 < / RTI > conductive material. |