http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20140105157-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8d0fc2b70675ee19bd5fc464f5ae9061 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-448 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44 |
| filingDate | 2013-02-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2e8f55d502fb86ae3b22326cb1e396bb |
| publicationDate | 2014-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20140105157-A |
| titleOfInvention | Selective atomic layer deposition apparatus and method |
| abstract | The present invention discloses a selective atomic layer deposition method and apparatus. According to the present invention, there is provided a method of selective atomic layer deposition comprising: forming a pattern with a conductor material on a substrate; Applying a current to the pattern to generate resistance heat; And depositing a thin film on the pattern or in an area other than the pattern by implanting a source gas of the precursor and the reactant, wherein the deposition area of the thin film is determined by the temperature of the pattern through the resistive heat A selective atomic layer deposition method is provided. |
| priorityDate | 2013-02-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 17.