| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e6d67894a893256e5b4d85401e466143 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66712
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42376
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66477
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2815
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7802 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-335
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate |
2012-12-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_66ededae8e15ffccee601a53ac543e35
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fa2bc8b184a632f99b34c34e929f9008
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_172a8a6ef35fcafee2bfb96149ec7a2f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_62d7c1419eaf0216d0ae11489069577f |
| publicationDate |
2014-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20140102254-A |
| titleOfInvention |
Self-aligned gate structure for field effect transistor |
| abstract |
The field effect transistor includes a substrate having an epitaxial layer, base regions extending from the top of the epitaxial layer to the epitaxial layer, an isolation region extending between the two base regions of the top of the substrate with sidewalls; And a polysilicon gate structure covering the isolation region comprising the sidewalls, wherein the effective gates are formed by a portion of the polysilicon covering the sidewalls on the base region. |
| priorityDate |
2011-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |