| abstract |
The present invention relates to a composite having a semiconductor structure embedded in a matrix. In one example, the composite comprises a matrix material. A plurality of semiconductor structures are embedded within the matrix material. Each semiconductor structure comprises an anisotropic nanocrystal core comprised of a first semiconductor material and having a aspect ratio of greater than 1.0 and less than 2.0. Each semiconductor structure also includes a nanocrystalline shell consisting of a second, different semiconductor material that partially or wholly surrounds the anisotropic nanocrystal core. The insulator layer encapsulates the respective nanocrystalline shell and anisotropic nanocrystal core pairings. |