http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20140102136-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ed62b7551998e54b35784cdbbb2778d5 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45529 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32449 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45531 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02167 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45544 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45546 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45527 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate | 2014-02-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3cd060bc4a3d9ce9aba67e94c46a132b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c745cc5d8b5cba025d944e864981d9f4 |
| publicationDate | 2014-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20140102136-A |
| titleOfInvention | Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium |
| abstract | Provided are a method for manufacturing a semiconductor device, a substrate processing apparatus, and a recording medium, which form a thin film having a high resistance to HF and a low dielectric constant with high productivity in a low temperature region. A method of manufacturing a semiconductor device according to an embodiment of the present invention includes the steps of forming a first layer containing boron and a halogen group by supplying a first source gas containing boron and a halogen group to the substrate, By performing a predetermined number of cycles to carry out the step of reforming the first layer by supplying a second source gas containing a predetermined element and an amino group to form a second layer containing a predetermined element, boron, carbon and nitrogen, And forming a thin film on the substrate including the element, boron, carbon, and nitrogen. |
| priorityDate | 2013-02-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 77.