| abstract |
The present invention relates to a TSV barrier layer chemical mechanical polishing slurry comprising a wear agent, a combination metal corrosion inhibitor, a chelating agent, an oxidizing agent, a silicon nitride inhibitor and a pH adjusting agent. Polishing slurry of the present invention is higher SiO 2 Removal rate and a lower Si 3 N 4 removal rate, which exhibit the desired planarization efficacy for the barrier layer and stop at the Si 3 N 4 layer to form TSV. In addition, the desired correction of defects in previous and polishing processes is achieved without contamination. |