http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20140099074-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fa80eed27901ac84139c7a7109c21e17 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/F21Y2115-10 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 |
| filingDate | 2013-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_56fee90e5b7c2d5a73488dd1562966bb |
| publicationDate | 2014-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20140099074-A |
| titleOfInvention | Light emitting device |
| abstract | According to an embodiment of the present invention, a light emitting device includes a first semiconductor layer; a strain reducing layer arranged on the first semiconductor layer to reduce a strain generated on the semiconductor layer; an active layer on the strain reducing layer; and a light emitting structure which is arranged on the active layer and includes a second semiconductor layer. The strain reducing layer includes at least two subgroups. The subgroup is formed by alternately laminating at least two pairs of an InGaN layer and a GaN layer. The thickness of the subgroup increases as the subgroup is getting closer to the active layer. |
| priorityDate | 2013-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.