http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20140095208-A
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_33cf281df1fdf76b7da1bb88a75ba80d |
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B08B3-04 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67051 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B05B1-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B08B3-02 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C19-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G09G3-20 |
filingDate | 2013-01-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_be073f5e54f397527354e24c1f2d8acf http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4c528b51524d4504597555061f0211cb |
publicationDate | 2014-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | KR-20140095208-A |
titleOfInvention | Shift register |
abstract | The present invention relates to a shift register capable of preventing deterioration of a switching element, and more particularly, to a shift register for sequentially outputting a scan pulse, wherein at least one switching element provided in the shift register comprises a gate electrode and a semiconductor Wherein a shortest distance between any one edge of the semiconductor layer and either edge of the gate electrode is less than or equal to 2 um or a semiconductor layer is formed on either one of the semiconductor layers so as to overlap one edge of the gate electrode And one edge of the gate electrode extends further toward the outer side than the edge of the gate electrode. |
priorityDate | 2013-01-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 48.