http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20140084057-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6c8d4dc7bd1a30d8fda907fceaeb4e69 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-403 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B19-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B21-0632 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B19-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-38 |
| filingDate | 2012-10-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_84b376b41e4b155827acfbc8e772092d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8abfd95b2687a47354872300298de006 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cdab2aa137670d2080f2968f5b17e8b0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_255c1c0d6cfcd1f9297dbd4c0a38232c |
| publicationDate | 2014-07-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20140084057-A |
| titleOfInvention | Method for producing nitride semiconductor crystal of group 13 metal of periodic table, and nitride semiconductor crystal of group 13 metal of periodic table produced by said production method |
| abstract | In the Group 13 metal nitride semiconductor crystal of Periodic Table of Elements obtained by epitaxial growth on a base substrate having a nonpolar plane and / or a semipolar plane as a principal plane, the coefficient of extinction is small and can be suitably used for a device, It is an object of the present invention to provide a high-quality semiconductor crystal whose dopant concentration is controlled, and a manufacturing method capable of manufacturing such a semiconductor crystal. By suppressing oxygen doping due to impurities and increasing the Si concentration higher than the O concentration, precise control of the dopant concentration is achieved, and furthermore, a high-quality Group 13 metal nitride semiconductor crystal having a small extinction coefficient and suitable for devices is provided . |
| priorityDate | 2011-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 52.