| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-505
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-36 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate |
2012-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_42b67b4216293b1b51473f0010684970
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f6e3c6f166919b09ad739bfab286cc40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_90cde7fc84b171954b53d599d415c8be
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_45da1dab69d54f9087c78f4417795431 |
| publicationDate |
2014-06-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20140074942-A |
| titleOfInvention |
Activated silicon precursors for low temperature deposition |
| abstract |
Methods of low temperature deposition of silicon-containing films using activated SiH-containing precursors are provided. Such SiH-containing precursors may have reactive functional groups such as halogen or cyano moieties. A method of depositing SiN films using halogenated or cyanated silanes is described. Plasma processing conditions may be used to adjust the carbon, hydrogen and / or nitrogen content in the films. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11152205-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20190018040-A |
| priorityDate |
2011-09-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |