| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_099413ae0cf5a2b6398b5151766cd260 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66742
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78618
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-06 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate |
2012-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_25ee693d7d7c131a6a63d80847018661
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7ee77ffb0696133fde1bdd6ecc82161e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9711a392fa98aebcfd3cc30afb3db655
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fa19b94484ed32e31a1b66d84b09f39b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f8b1112794a3e14a055bbcb78ae35dd4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5a190c2f7b39a338f76bbb386401bd7b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ced61f24428e2804ae131d8f065c605e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ef9e8b4c0e5bddd7855ba16348dcb890
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_91fb7c812116b4171d8e5c3e9e2c4292 |
| publicationDate |
2014-06-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20140074742-A |
| titleOfInvention |
Transistor, method of manufacturing the same and electronic device including transistor |
| abstract |
A transistor, a method of manufacturing the same, and an electronic device including a transistor. The disclosed transistor may comprise a channel layer comprising metal oxides and source and drain electrodes in contact with the first and second regions of the channel layer. The first and second regions of the channel layer may be treated with a plasma to have a higher carrier concentration than the remaining regions of the channel layer. The first and second regions may be regions treated with a plasma containing hydrogen. The first and second regions may contain hydrogen. The first and second regions may have lower oxygen concentrations than the remaining regions of the channel layer. The first and second regions may have a higher nitrogen concentration than the remaining regions of the channel layer. The metal oxide of the channel layer may include a ZnON-based semiconductor. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20170080506-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10461198-B2 |
| priorityDate |
2012-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |