| abstract |
The light emitting device of the embodiment includes a support substrate, a first conductivity type semiconductor layer sequentially disposed on the support substrate, a light emitting structure having the active layer and the second conductivity type semiconductor layer, and a light emitting structure disposed between the first conductivity type semiconductor layer and the active layer, x G 1 - x N superlattice layer and a Al y G 1 - y N second comprises a reflective layer comprising at least one double layered structure of the grid layer, x and y are different Al x G 1-x N superlattice layer to each other and Al y G 1 - y N superlattice layers have different refractive indices. |