| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7833 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7848
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66568
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0653
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6656
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0649
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66575
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0603
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823468
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66636
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823864
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823412
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-167
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-165
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823425
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823807
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7834
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7833
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823814
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02636
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate |
2012-11-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5e629e534411c07f53fbdb62e337c170
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d972fdf1c69481dddc69001e7c485f0c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7638fcf80878f3779aaf68a6f4f7294c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a356d3b9a09513b3794c6aad2e080299
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4cf9115ab53a2cd40f7a794b7d1215c7 |
| publicationDate |
2014-05-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20140066042-A |
| titleOfInvention |
METHOD FOR FORMING A SEMICONDUCTOR DEVICE WITH INTEGRATED STRESSER |
| abstract |
A substrate having an active region is prepared. A lightly doped drain (LDD) is formed in the active region. Thereby forming a high-speed etching region containing phosphorus (P) in the active region. The high-speed etching region is removed to form a first trench. A directional etching process is used to extend the first trench to form a second trench. The active region has a sigma-shape formed by the second trench. Thereby forming an embedded stressor in the second trench. A gate electrode is formed on the active region. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20160051151-A |
| priorityDate |
2012-11-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |