| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_94aade96d94102be386b3e57ea89301a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02131 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7684
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32135
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7682 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-764
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 |
| filingDate |
2011-09-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4d7f89da236b020b74d796a66d1f11bd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ef9d63f02296d588e568ebcfa8464ea1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b67839b7a11f9a2135fefc4c9631fee1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6eb9fa3ad39c49d747bdb99ab7125b9f |
| publicationDate |
2014-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20140065450-A |
| titleOfInvention |
Method of forming air gap interconnect structure |
| abstract |
Embodiments of the present invention provide a method of forming an air gap interconnect structure. The first step of the method is to form on the substrate a conductive structure separated by a sacrificial material. The scale of the conductive structure is less than 65 nm and the conductive structure is polished by both Chemical Mechanical Polishing (CMP) and Stress-Free ElectroPolishing (SFP). The second step of the method is to remove the sacrificial material to form a recess between the conductive structures. And a third step of the method is to deposit the dielectric material at a non-isotropic angle on the conductive structure and in the recess to form an air gap in the dielectric material in the recess. During formation of the conductive structure, the hard mask is not deposited. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112928095-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112928095-B |
| priorityDate |
2011-09-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |