| abstract |
The method according to embodiments of the present invention includes the steps of disposing a flexible film 48 on a wafer of semiconductor light emitting devices, each semiconductor light emitting device comprising a light emitting layer sandwiched between an n- type region and a p-type region The semiconductor structure (13). The wafer of semiconductor light emitting elements is bonded to the substrate 50 via the flexible film 48. After bonding, the flexible film 48 is in direct contact with the semiconductor structure 13. The method further includes dividing the wafer after bonding the wafer to the substrate (50). |