| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d78fe473c8a29219129bbc8bb50f6a59 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N2033-0095 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-167
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-041
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N33-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-14 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N21-3563
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B15-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N21-35
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-00 |
| filingDate |
2012-08-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_33262538fb63b882ef6707ac7fa573c1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1b37df8f9a6e6753e4f242ad04995dcd |
| publicationDate |
2014-05-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20140058587-A |
| titleOfInvention |
Calculation method of nitrogen concentration in silicon single crystal and calculation method of resistivity shift amount |
| abstract |
The present invention relates to a method for calculating a nitrogen concentration in a silicon single crystal doped with nitrogen, characterized in that the nitrogen doped silicon single crystal is obtained from the difference between the resistivity after the heat treatment for erasing the oxygen donor and the resistivity after the heat treatment for erasing the nitrogen oxygen donor The carrier concentration difference [Delta] [n], the oxygen concentration [Oi], and the nitrogen concentration [N] are obtained in advance, Oi] of the nitrogen-doped silicon single crystal is calculated by calculating an unknown nitrogen concentration [N] in the nitrogen-doped silicon single crystal. Thereby, a method of calculating the nitrogen concentration in the silicon single crystal capable of obtaining a value of the nitrogen concentration correspondingly even when the oxygen concentration is different, and a method of calculating the shift amount of the resistivity are provided. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20180092811-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20190042581-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10330599-B2 |
| priorityDate |
2011-09-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |