abstract |
The present invention provides a MgO target for sputtering capable of accelerating a deposition rate even when MgO is used as a target for sputtering when a MgO film is formed. The target for sputtering according to the present invention is a sputtering MgO target containing MgO and a conductive material as a main component. When the MgO film containing the conductive material is formed by the DC sputtering method, orientation of the MgO film is imparted to the deposited MgO film The MgO target for sputtering is a MgO target for sputtering. |